Title :
3 S/mm extrinsic transconductance of InP-based high electron mobility transistor by vertical and lateral scale-down
Author :
Matsuzaki, H. ; Maruyama, T. ; Enoki, T. ; Tokumitsu, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
7/20/2006 12:00:00 AM
Abstract :
Record extrinsic transconductance (gmext) of 3 S/mm at room temperature for an InP-based high electron mobility transistor with an In0.53Ga0.47As/InAs composite channel is reported. Markedly enhanced gmext was achieved by reducing a gate-to-channel distance for improving intrinsic transconductance and a gate-to-ohmic distance for minimising series source resistance.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; In0.53Ga0.47As-InAs; In0.53Ga0.47As/InAs composite channel; InP-based high electron mobility transistor; extrinsic transconductance; gate-to-channel distance; gate-to-ohmic distance; lateral scale-down; series source resistance; vertical scale-down;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061962
