New device degradation due to ´cold´ carriers created by band-to-band tunneling

Author

Igura, Yasuo ; Matsuoka, Hideyuki ; Takeda, Eiji

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

227

Lastpage

229

Abstract

Device degradation caused by so-called ´cold´ carriers due to band-to-band tunneling in a MOS drain region is studied. The cold carriers acquire energy from the electric field in the drain region and surmount the Si-SiO/sub 2/ barrier. In an n-channel device, injected holes cause a decrease in the tunnel current and a negative MOS threshold-voltage shift opposite to that observed in hot-carrier degradation previously reported. A simple analytical model is presented. This model agrees well with the experimental data in both n- and p-channel devices.<>

Keywords

insulated gate field effect transistors; leakage currents; metal-insulator-semiconductor devices; semiconductor device models; tunnelling; MOS drain region; MOSFET; Si-SiO/sub 2/ barrier; analytical model; band-to-band tunneling; cold carriers; drain region electric field; injected holes; n-channel device; negative MOS threshold-voltage shift; p-channel devices; tunnel current; tunnel leakage current; Analytical models; Degradation; Energy consumption; Hot carriers; Laboratories; Leakage current; Stress; Threshold voltage; Tunneling; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31729

Filename

31729