DocumentCode
1165158
Title
Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method
Author
Ito, Masanori ; Mikawa, Takashi ; Wada, Osamu
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
10
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
230
Lastpage
231
Abstract
An analysis presented for an AlGaSb diode in which it was approximated by a p-i-n diode with an equivalent multiplication region having a length of one-eighth of the whole depletion region and was combined with R.B. Emmon´s p-i-n avalanche photodiode analysis (1967). A relationship between the gain-bandwidth product and the carrier concentration is derived, and it is shown to agree well with the experimental data.<>
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; carrier density; gallium compounds; semiconductor device models; AlGaSb avalanche photodiodes; carrier concentration; depletion region; equivalent multiplication region method; gain-bandwidth product; p-i-n diode; Avalanche photodiodes; Bit rate; Chemicals; Epitaxial growth; Equations; Etching; Frequency response; P-i-n diodes; PIN photodiodes; Zinc;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31730
Filename
31730
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