Title :
Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method
Author :
Ito, Masanori ; Mikawa, Takashi ; Wada, Osamu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
5/1/1989 12:00:00 AM
Abstract :
An analysis presented for an AlGaSb diode in which it was approximated by a p-i-n diode with an equivalent multiplication region having a length of one-eighth of the whole depletion region and was combined with R.B. Emmon´s p-i-n avalanche photodiode analysis (1967). A relationship between the gain-bandwidth product and the carrier concentration is derived, and it is shown to agree well with the experimental data.<>
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; carrier density; gallium compounds; semiconductor device models; AlGaSb avalanche photodiodes; carrier concentration; depletion region; equivalent multiplication region method; gain-bandwidth product; p-i-n diode; Avalanche photodiodes; Bit rate; Chemicals; Epitaxial growth; Equations; Etching; Frequency response; P-i-n diodes; PIN photodiodes; Zinc;
Journal_Title :
Electron Device Letters, IEEE
