Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter

Detailed simulations of the collector current in a vertical poly-emitter p-n-p transistor have been carried out to verify the minority-hole mobility model of S.E. Swirhun et al. (ibid., vol.7, no.3, p.168-71, 1986). The simulations were based on the SIMS profile, incorporating all published physical parameters, and the results showed good agreement with the measurements for base doping ranging from 10/sup 18/ to 10/sup 19/ cm/sup -3/. In addition, the effective surface recombination velocity of electrons at the p/sup +/ poly/Si interface was found by fitting the measured base current to be approximately 1.4*10/sup 5/ cm/s, which is comparable to its n-p-n counterpart.<>