Title :
High-quality deposited gate oxide MOSFET´s and the importance of surface preparation
Author :
Stasiak, J. ; Batey, J. ; Tierney, E. ; Li, J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The fabrication and electrical characteristics of MOSFETs incorporating thin gate oxides deposited by a modified plasma-enhanced chemical-vapor-deposition (PECVD) process are reported. The gate oxide deposition and all subsequent steps were carried out at or below 400 degrees C. These results represent the first demonstration of near-thermal-gate oxide quality. MOSFETs fabricated using a low-temperature PECVD gate oxide process without requiring a high-temperature anneal. The ultimate performance of the deposited oxide devices is shown to be critically dependent on the degree of process induced microroughness of the starting silicon surface. Low-temperature effective mobility measurements are used to compare inversion-layer scattering mechanisms in these devices.<>
Keywords :
carrier mobility; chemical vapour deposition; insulated gate field effect transistors; insulating thin films; oxidation; semiconductor technology; 400 C; MOSFETs; PECVD; Si starting surface; SiO/sub 2/-Si; deposited oxide devices; electrical characteristics; fabrication; gate oxide deposition; inversion-layer scattering mechanisms; low-temperature PECVD gate oxide process; mobility measurements; near-thermal-gate oxide quality; performance; plasma-enhanced chemical-vapor-deposition; process induced microroughness; surface preparation; thin gate oxides; Annealing; Chemical processes; Dielectric substrates; Electric variables; Fabrication; MOSFET circuits; Oxidation; Plasma chemistry; Plasma temperature; Silicon;
Journal_Title :
Electron Device Letters, IEEE
