Title :
Lateral IMPATT diodes
Author :
Stabile, Paul J. ; Lalevic, B.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Conventional IMPATT diodes are the highest-power microwave semiconductor devices, but they are difficult to couple light into, challenging to integrate into monolithic circuits, to incorporate a third terminal, or to series combine. The lateral IMPATT diode is proposed as a solution to these problems. This device is planar and features contact and drift regions that are all adjacent to the wafer surface. Two types of fabrication schemes are discussed and pulsed RF power results, up to 17.4 GHz, are demonstrated. This device structure promises to be well suited for microwave, millimeter-wave, and electrooptic integrated circuits in which maximum power is required.<>
Keywords :
IMPATT diodes; MMIC; integrated optoelectronics; solid-state microwave devices; 17.4 GHz; EOIC; MIMIC; MMIC; device structure; drift regions; electrooptic integrated circuits; fabrication schemes; features; lateral IMPATT diode; light coupling; microwave IC; microwave semiconductor devices; millimeter-wave; monolithic integration; planar; pulsed RF power results; series combination; third terminal; wafer surface; IMPATT diodes; Integrated optoelectronics; MMICs; Microwave devices;
Journal_Title :
Electron Device Letters, IEEE
