Title :
The effect of transients on hot carriers
Author :
Hänsch, W. ; Weber, W.
Author_Institution :
Siemens AG, Munich, West Germany
fDate :
6/1/1989 12:00:00 AM
Abstract :
The influence of time-dependent voltages on hot-carrier generation in MOSFETS is studied by transient device simulation. For transient times down to the nanosecond range, no transient effects on hot-carrier formation and injection are found. This result is confirmed experimentally by substrate current measurements under various dynamic voltage conditions down to rise/fall times of 3 ns. This result has important consequences for the interpretation of dynamic stress data, since it means that device-related dynamic effects can be neglected in comparison with interface-related effects in transient ranges relevant to practical applications.<>
Keywords :
insulated gate field effect transistors; 3 ns; MOSFETS; device-related dynamic effects; dynamic voltage conditions; effect of transients; fall-times; hot carriers; hot-carrier formation; hot-carrier generation; interface-related effects; interpretation of dynamic stress data; rise-times; substrate current measurements; time-dependent voltages; transient device simulation; transient times; Charge carrier processes; Current measurement; Equations; Hot carriers; Human factors; Impact ionization; MOSFET circuits; Stress; Substrate hot electron injection; Voltage;
Journal_Title :
Electron Device Letters, IEEE
