Title :
Single event upsets for Space Shuttle flights of new general purpose computer memory devices
Author :
O´Neill, P.M. ; Badhwar, G.D.
Author_Institution :
NASA Johnson Space Center, Houston, TX, USA
fDate :
10/1/1994 12:00:00 AM
Abstract :
The replacement of the magnetic core with a well characterized semiconductor memory in the Space Shuttle orbiter general purpose computers (GPCs) has provided a wealth of on-orbit radiation effects data since 1991. The fault tolerant GPCs detect, correct, and downlink memory upset status and orbiter position information every few seconds, giving the ability to correlate 1400 upsets to date with altitude, geomagnetic latitude, and solar conditions. The predicted upset rate was computed by a modified path-length distribution method. The modification accounts for the Weibull distribution cross-section (rather than a single upset threshold) and the device sensitive volume thickness. Device thickness was estimated by the method normally used to account for edge effects at the upset cross-section discontinuity that occurs at ion changes. A Galactic cosmic ray environment model accurately models the average particle flux for each mission. The predicted and observed upset rates were found to be in good agreement for sensitive volume thicknesses consistent with the device´s fabrication technology
Keywords :
aerospace computing; cosmic ray effects and interactions; general purpose computers; radiation effects; semiconductor storage; space vehicles; Galactic cosmic ray environment model; Space Shuttle flights; Weibull distribution cross-section; altitude; average particle flux; device sensitive volume thickness; fabrication technology; fault tolerance; general purpose computer memory devices; geomagnetic latitude; ion changes; memory upset status; modified path-length distribution method; orbiter position; radiation effects; semiconductor memory; single event upsets; solar conditions; Downlink; Fault detection; Fault tolerance; Geomagnetism; Geophysics computing; Magnetic cores; Radiation effects; Semiconductor memory; Single event upset; Space shuttles;
Journal_Title :
Nuclear Science, IEEE Transactions on