Title :
Temperature-dependent dose rate effects in CMOS/SOS devices
Author :
Seidler, W. ; Walters, D. ; Florian, J. ; Harper, H. ; Lutjens, S. ; Salazar, M. ; Alexander, D. ; Smith, A. ; Heideman, B. ; Self, T. ; Ferguson, G. ; Ovrebo, G. ; Blomquist, S. ; Blackburn, J. ; Vanderwall, J.
Author_Institution :
JAYCOR, Huntsville, AL, USA
fDate :
10/1/1994 12:00:00 AM
Abstract :
The measured photocurrent output by the 3392-μm p-channel and 1992-μm n-channel transistors in the output buffer of the Harris 05131A Octal Latch manufactured in the TSOS4 1.25-μm CMOS/SOS process are used to extract the field and temperature-dependent conductivity of the sapphire substrate. The bulk conductivity was found to vary from 2.15×10-15 Ω-1/cm/rad(Si)/s at -55°C to 4.16×10-15 Ω-1/cm/rad(Si)/s at +125°C. Parasitic transistor action contributed significant photocurrents with the gain of the n-channel increasing from 1.3±0.3 at -55°C to 5.7±3.3 at +125°C. The gain of the p-channel followed the same temperature variation, with 1.6±0.5 at -55°C to 7.0±2.0 at +125°C. The temperature-dependence of both the substrate and parasitic transistor action appeared due to an Arrenhius variation of the carrier lifetime or mobility controlled by a trap 0.05 eV above the quasi-Fermi level
Keywords :
CMOS integrated circuits; carrier lifetime; carrier mobility; detector circuits; nuclear electronics; photoconductivity; radiation effects; semiconductor counters; semiconductor-insulator-semiconductor structures; Arrenhius variation; CMOS/SOS devices; Harris 05131A Octal Latch; bulk conductivity; carrier lifetime; measured photocurrent output; mobility; n-channel transistors; parasitic transistor action; quasi-Fermi level; sapphire substrate; temperature-dependent dose rate effects; CMOS process; CMOS technology; Conductivity measurement; Geometry; Latches; Photoconductivity; Predictive models; Rails; Semiconductor device modeling; Solid modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
