• DocumentCode
    1165345
  • Title

    An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs)

  • Author

    Jamasb, Shahriar

  • Author_Institution
    Mazdak Technol., Carlsbad, CA, USA
  • Volume
    4
  • Issue
    6
  • fYear
    2004
  • Firstpage
    795
  • Lastpage
    801
  • Abstract
    The instability of the dc operating point in pH-sensitive ion-selective field effect transistors (ISFETs) renders the continuous monitoring of physiological pH using these devices inaccurate. This instability, commonly known as drift, manifests itself as a relatively slow, monotonic change in the measuring output signal in the absence of variations in the pH. In this work, a method for correction of ISFET drift is presented. This method takes advantage of the relatively small instantaneous drift rate in ISFETs to compensate for the drift signal superimposed on the sensor output. The validity of this method is experimentally confirmed by continuous monitoring of pH under in vitro conditions approximating metabolic acidosis using a Si3N4-gate pH-sensitive ISFET.
  • Keywords
    drift instability; ion sensitive field effect transistors; pH measurement; silicon compounds; ISFET drift; Si3N4; dc operating point instability; drift counteraction; drift signal; instantaneous drift rate; ion-selective field effect transistors; metabolic acidosis; pH-sensitive ISFET; physiological pH; Biomedical monitoring; Blood; Condition monitoring; FETs; In vitro; In vivo; Insulation; PROM; Packaging; Stability; 65; Continuous monitoring; ISFET; drift; instability; ion-selective field effect transistor; pH;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2004.833148
  • Filename
    1359841