DocumentCode :
1165379
Title :
High-power 0.82 mu m superluminescent diodes with extremely low Fabry-Perot modulation depth
Author :
Semenov, A.T.
Volume :
28
Issue :
2
fYear :
1992
Firstpage :
127
Lastpage :
129
Abstract :
Superluminescent AlGaAs-GaAs diodes with 15 mW output power and 1% Fabry-Perot modulation depth and modules with 3 mW polarisation maintaining fibre output have been developed. At output powers of more than 8 mW the effect of saturation on power fluctuations was observed.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; light emitting diodes; superradiance; 0.82 micron; 15 mW; 3 mW; AlGaAs-GaAs diodes; Fabry-Perot modulation depth; LED; high power diodes; polarisation maintaining fibre; power fluctuations; saturation; superluminescent diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920079
Filename :
118923
Link To Document :
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