Title :
Ion-implanted GaAs/AlGaAs heterojunction FET´s grown by MOCVD
Author :
Wang, G.W. ; Feng, Milton ; Liaw, Y.P. ; Kaliski, Robert ; Lau, C.L. ; Ito, C.
Author_Institution :
Ford Microelectron., Inc., Colorado Springs, CO, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGa heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an f/sub t/ of 40 GHz, which is comparable to results obtained from 0.25- mu m gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; ion implantation; junction gate field effect transistors; solid-state microwave devices; vapour phase epitaxial growth; 0.5 micron; 3 in; 40 GHz; GaAs substrate wafers; GaAs-AlGaAs; MOCVD; MOVPE; device characteristics; fabrication; gate bias; heteroepitaxy; heterojunction; heterojunction FET device; heterostructures; ion implantation; metalorganic chemical vapor deposition; microwave FET; microwave performance; semiconductors; transconductance; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunctions; Ion implantation; MESFETs; MOCVD; Microwave FETs; Microwave devices; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
