Subpicosecond InP/InGaAs heterostructure bipolar transistors

Author

Chen, Young-Kai ; Nottenburg, Richard N. ; Panish, Morton B. ; Hamm, R.A. ; Humphrey, D.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

10

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

267

Lastpage

269

Abstract

Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency f/sub $/T=165 GHz and maximum oscillation frequency f/sub MAX/=100 GHz at room temperature. The authors model shows that an f/sub $/T beyond 386 GHz is obtainable by further vertical scaling. Ring oscillators implemented with nonthreshold logic (NTL) and transistors having f/sub MAX/=71 GHz show a propagation delay of 14.7 ps and 5.4 mW average power consumption per stage.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; oscillators; semiconductor device models; solid-state microwave devices; 14.7 ps; 5.4 mW; 71 to 386 GHz; HBT; InP-InGaAs; NTL; maximum oscillation frequency; model; nonthreshold logic; power consumption; propagation delay; ring oscillators; room temperature; semiconductors; subpicosecond extrinsic delay; unity-current-gain cutoff frequency; vertical scaling; Bipolar transistors; Circuits; Cutoff frequency; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Propagation delay; Ring oscillators; Scattering parameters;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31742

Filename

31742