Title :
Very wide spectrum multiquantum well superluminescent diode at 1.5 mu m
Author :
Kondo, Satoshi ; Yasaka, Hiroshi ; Noguchi, Y. ; Magari, K. ; Sugo, M. ; Mikami, Osamu
Author_Institution :
NTT Opto-electron. Labs., Kanagawa, Japan
Abstract :
An InGaAs-InGaAsP multiquantum well superluminescent diode (SLD) emitting at 1.5 mu m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170 nm, which gives a calculated coherence length of 13 mu m, approximately one third that of 1.5 mu m conventionally available bulk SLDs.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; spectral line breadth; superradiance; 1.5 micron; InGaAs-InGaAsP; LED; MQW device; broad spectral width; multiquantum well; superluminescent diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920082
