Title :
New empirical nonlinear model for HEMT devices
Author :
Angelov, Iltcho ; Zirath, Herbert
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A new large signal model for HEMTs, capable of modelling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, is described. Model parameter extraction is straightforward and is made for a submicrometre gatelength delta -doped pseudomorphic HEMT. Measured and modelled DC and S-parameters are compared.
Keywords :
S-parameters; high electron mobility transistors; semiconductor device models; DC parameters; HEMT devices; I/V characteristics; S-parameters; characteristic transconductance peak; current-voltage characteristic; delta doped type; large signal model; model parameter extraction; nonlinear model; pseudomorphic HEMT; submicrometre gatelength; submicron gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920087
