DocumentCode :
1165568
Title :
Thermal stability of indium-tin-oxide/n-GaAs Schottky diodes
Author :
Morgan, D.V. ; Bunce, R.W.
Volume :
28
Issue :
2
fYear :
1992
Firstpage :
142
Lastpage :
144
Abstract :
The thermal degradation of ITO Schottky contacts on GaAs has been studied. The rectifying contacts show rapid degradation with heating and could have serious implications for optoelectronic devices that operate at elevated temperatures.
Keywords :
III-V semiconductors; Schottky-barrier diodes; annealing; gallium arsenide; indium compounds; semiconductor materials; solid-state rectifiers; stability; thermal analysis; tin compounds; ITO-GaAs; ITO/n-GaAs; InSnO-GaAs; Schottky diodes; heating; rectifying contacts; thermal degradation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920088
Filename :
118932
Link To Document :
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