DocumentCode
1165568
Title
Thermal stability of indium-tin-oxide/n-GaAs Schottky diodes
Author
Morgan, D.V. ; Bunce, R.W.
Volume
28
Issue
2
fYear
1992
Firstpage
142
Lastpage
144
Abstract
The thermal degradation of ITO Schottky contacts on GaAs has been studied. The rectifying contacts show rapid degradation with heating and could have serious implications for optoelectronic devices that operate at elevated temperatures.
Keywords
III-V semiconductors; Schottky-barrier diodes; annealing; gallium arsenide; indium compounds; semiconductor materials; solid-state rectifiers; stability; thermal analysis; tin compounds; ITO-GaAs; ITO/n-GaAs; InSnO-GaAs; Schottky diodes; heating; rectifying contacts; thermal degradation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920088
Filename
118932
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