Title :
Quasiballistic electron transport in InP/InGaAs heterojunction bipolar transistors
Author :
Yang, Y.F. ; Houston, P.A. ; Hopkinson, Mark
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
Quasiballistic electron transport in the InGaAs base of an n-p-n HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; HBT; InGaAs base; InP tunnel injector; InP-InGaAs; electron transport; heterojunction bipolar transistors; hot-electron spectroscopy; n-p-n device; quasiballistic electrons;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920090
