• DocumentCode
    1165585
  • Title

    Quasiballistic electron transport in InP/InGaAs heterojunction bipolar transistors

  • Author

    Yang, Y.F. ; Houston, P.A. ; Hopkinson, Mark

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    28
  • Issue
    2
  • fYear
    1992
  • Firstpage
    145
  • Lastpage
    147
  • Abstract
    Quasiballistic electron transport in the InGaAs base of an n-p-n HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; HBT; InGaAs base; InP tunnel injector; InP-InGaAs; electron transport; heterojunction bipolar transistors; hot-electron spectroscopy; n-p-n device; quasiballistic electrons;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920090
  • Filename
    118934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1165585