DocumentCode :
1165585
Title :
Quasiballistic electron transport in InP/InGaAs heterojunction bipolar transistors
Author :
Yang, Y.F. ; Houston, P.A. ; Hopkinson, Mark
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Volume :
28
Issue :
2
fYear :
1992
Firstpage :
145
Lastpage :
147
Abstract :
Quasiballistic electron transport in the InGaAs base of an n-p-n HBT with an InP tunnel injector has been observed for the first time using the technique of hot-electron spectroscopy. Electrons injected from the emitter which are not scattered retain a narrow energy distribution after traversing the base. The contribution of the quasiballistic electrons to the total collector current has also been estimated.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; HBT; InGaAs base; InP tunnel injector; InP-InGaAs; electron transport; heterojunction bipolar transistors; hot-electron spectroscopy; n-p-n device; quasiballistic electrons;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920090
Filename :
118934
Link To Document :
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