DocumentCode
1165649
Title
Extremely low threshold current buried-heterostructure strained InGaAs-GaAs multiquantum well lasers
Author
Xu, James Y. ; Yang, G.W. ; Zhang, Jun Min ; Xu, Z.T. ; Chen, Lin
Volume
28
Issue
2
fYear
1992
Firstpage
154
Lastpage
156
Abstract
A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; optical workshop techniques; semiconductor growth; semiconductor junction lasers; 1.65 mA; 30 mW; 44.6 percent; BH semiconductor laser; CW threshold current; InGaAs-GaAs; buried-heterostructure; crystal growth technique; differential quantum efficiency; fabrication; hybrid MBE/LPE method; liquid phase epitaxy; low threshold current; molecular beam epitaxy; multiquantum well; room temperature; strained MQW lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920096
Filename
118940
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