DocumentCode
1165849
Title
Inverter models of CMOS gates for supply current and delay evaluation
Author
Nabavi-Lishi, A. ; Rumin, N.C.
Author_Institution
Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
Volume
13
Issue
10
fYear
1994
fDate
10/1/1994 12:00:00 AM
Firstpage
1271
Lastpage
1279
Abstract
The subject of this paper is the reduction of transistor-level models of CMOS logic gates to equivalent inverters, for the purpose of computing the supply current in digital circuits. No restrictions are applied to either the number of switching inputs or the transition times and relative delays of the input voltages. The relative positions of the switching inputs are also accounted for in the case of series-connected MOSFET´s. When combined with our previously reported CMOS inverter model, the peak current is obtained in a time approximately three orders faster than HSPICE with the level-3 MOSFET model. The corresponding accuracy is around 12%. If the current waveform is required, the speed improvement is about an order less. Since the inverter model also yields the delay at no extra cost, the timing of the current waveforms can be done automatically, without recourse to a timing simulator. Although the emphasis here is on CMOS static gates, the method is applicable to dynamic logic gates as well
Keywords
CMOS integrated circuits; capacitance; circuit analysis computing; combinatorial circuits; delays; integrated logic circuits; logic gates; CMOS gates; current waveform; delay evaluation; digital circuits; dynamic gates; inverter models; logic gates; peak current; series-connected MOSFETs; static gates; supply current; transistor-level models; CMOS digital integrated circuits; CMOS logic circuits; Current supplies; Delay; Digital circuits; Logic gates; Pulse inverters; Semiconductor device modeling; Timing; Voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.317470
Filename
317470
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