Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits

Author

Mishra, Umesh K. ; Jensen, Joseph F. ; Rensch, D.B. ; Brown, April S. ; Stanchina, William E. ; Trew, Robert J. ; Pierce, M.W. ; Kargodorian, Tsolog V.

Author_Institution

North Carolina State Univ., Raleigh, NC, USA

Volume

10

Issue

10

fYear

1989

Firstpage

467

Lastpage

469

Abstract

AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An f/sub t/ and an f/sub max/ of 49 and 62 GHz, respectively, have been achieved in a device with a 2*5- mu m/sup 2/ emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW.<>

Keywords

aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; sequential circuits; 14.5 GHz; 15 GHz; 444 mW; 49 GHz; 62 GHz; 82 mW; AlInAs-GaInAs; CML; divide-by-four circuits; divide-by-two circuit; heterojunction bipolar transistors; static flip-flop frequency dividers; Flip-flops; Frequency conversion; Heterojunction bipolar transistors; Logic circuits; Logic devices; Power dissipation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43102

Filename

43102