High Efficiency Linear Power Amplifier for IEEE 802.11g WLAN Applications

Author

Huang, Chien-Chang ; Chen, Wei-Ting ; Chen, Kuan-Yu

Author_Institution

Dept. ofCommunication Eng, Yuan Ze Univ., Tao-Yuan

Volume

16

Issue

9

fYear

2006

Firstpage

508

Lastpage

510

Abstract

This letter presents the power amplifier (PA) design for IEEE 802.11g WLAN applications by using InGaP/GaAs heterojunction bipolar transistors (HBTs) with the dual bias network as the linearizer to improve the output power capability and linearity. The final designed PA utilizes a 3.3-V supply voltage producing a good power-aided-efficiency (PAE) in 39.3% with 26.5-dBm output power and 18.1-dB gain for a 2.4-GHz OFDM/64-QAM stimulus, while the error vector magnitude (EVM) is maintained at 4.9%, satisfying the standard specifications

Keywords

IEEE standards; gallium arsenide; heterojunction bipolar transistors; indium compounds; power amplifiers; wireless LAN; 18.1 dB; 2.4 GHz; 3.3 V; IEEE 802.11g; InGaP-GaAs; OFDM/64-QAM stimulus; WLAN; dual bias network; error vector magnitude; heterojunction bipolar transistors; power amplifier; power-aided-efficiency; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; OFDM; Power amplifiers; Power generation; Voltage; Wireless LAN; Heterojunction bipolar transistor (HBT); power amplifier (PA); power-aided efficiency (PAE); wireless local area network (WLAN);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.880702

Filename

1683808