Title :
High Efficiency Linear Power Amplifier for IEEE 802.11g WLAN Applications
Author :
Huang, Chien-Chang ; Chen, Wei-Ting ; Chen, Kuan-Yu
Author_Institution :
Dept. ofCommunication Eng, Yuan Ze Univ., Tao-Yuan
Abstract :
This letter presents the power amplifier (PA) design for IEEE 802.11g WLAN applications by using InGaP/GaAs heterojunction bipolar transistors (HBTs) with the dual bias network as the linearizer to improve the output power capability and linearity. The final designed PA utilizes a 3.3-V supply voltage producing a good power-aided-efficiency (PAE) in 39.3% with 26.5-dBm output power and 18.1-dB gain for a 2.4-GHz OFDM/64-QAM stimulus, while the error vector magnitude (EVM) is maintained at 4.9%, satisfying the standard specifications
Keywords :
IEEE standards; gallium arsenide; heterojunction bipolar transistors; indium compounds; power amplifiers; wireless LAN; 18.1 dB; 2.4 GHz; 3.3 V; IEEE 802.11g; InGaP-GaAs; OFDM/64-QAM stimulus; WLAN; dual bias network; error vector magnitude; heterojunction bipolar transistors; power amplifier; power-aided-efficiency; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; OFDM; Power amplifiers; Power generation; Voltage; Wireless LAN; Heterojunction bipolar transistor (HBT); power amplifier (PA); power-aided efficiency (PAE); wireless local area network (WLAN);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.880702
