DocumentCode :
1166040
Title :
A Low-Power, 
-Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications
-Band SiGe HBT Low-Noise Amplifier for Near-Space Radar ApplicationsAuthor :
Kuo, Wei-Min Lance ; Krithivasan, Ramkumar ; Li, Xiangtao ; Lu, Yuan ; Cressler, John D. ; Gustat, Hans ; Heinemann, Bernd
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Volume :
16
Issue :
9
fYear :
2006
Firstpage :
520
Lastpage :
522
Abstract :
A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780times660 mum2. The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications
Keywords :
Ge-Si alloys; MMIC amplifiers; airborne radar; bipolar MMIC; heterojunction bipolar transistors; low noise amplifiers; low-power electronics; radar equipment; 11.0 dB; 2.5 mW; 2.78 dB; 660 micron; 780 micron; 9.5 GHz; HBT; LNA; SiGe; X band; heterojunction bipolar transistors; low noise amplifier; low power amplifier; near space radar applications; noise figure; total-dose radiation immunity; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Phased arrays; Radar antennas; Radar applications; Silicon germanium; Heterojunction bipolar transistor (HBT); low-noise amplifier (LNA); low-power; noise figure (; radar; silicon-germanium (SiGe);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2006.880696
Filename :
1683812
Link To Document :
