Title :
Hot-electron immunity of SiO/sub 2/ dielectrics with fluorine incorporation
Author :
Wright, Peter J. ; Kasai, Naoki ; Inoue, Shunsuke ; Saraswat, Krishna C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The effect of fluorine incorporation in the gate oxide on the NMOSFET hot-electron immunity is examined. Fluorine is implanted in the polysilicon gate and diffused into the gate oxide. The hot-electron immunity of NMOSFETs is shown to increase with increasing fluorine doses. Measurement of device lifetime against substrate current shows that higher doses of fluorine lead to a change in the immunity to interface trap generation. Based on the results of Auger measurements, this has been correlated with a fluorine deficient layer near the interface.<>
Keywords :
Auger effect; fluorine; hot carriers; insulated gate field effect transistors; interface electron states; ion implantation; life testing; semiconductor device testing; silicon compounds; Auger measurements; NMOSFET hot-electron immunity; SiO/sub 2/:F gate dielectrics; device lifetime; fluorine deficient layer; gate oxide; interface trap generation; polysilicon gate; substrate current; Current measurement; Degradation; Dielectric measurements; Dielectric substrates; Electric breakdown; Implants; Ion implantation; MOSFET circuits; Stress; Voltage;
Journal_Title :
Electron Device Letters, IEEE
