Title :
Characteristics of MOCVD-grown thin p-clad InGaAs quantum-dot lasers
Author :
Lever, P. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.
Keywords :
III-V semiconductors; MOCVD; claddings; gallium arsenide; ground states; indium compounds; optical fabrication; optical saturation; quantum dot lasers; semiconductor growth; 4 mum; 50 mum; InGaAs; InGaAs quantum dot lasers; MOCVD; gain saturation; ground state lasing; metal-organic chemical vapor deposition; modal behavior; narrow stripe width devices; thin p-clad quantum dot lasers; threshold current density; Chemical vapor deposition; Gallium arsenide; Gold; Indium gallium arsenide; MOCVD; Quantum dot lasers; Stationary state; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers; InGaAs; quantum dot (QD); semiconductor laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.836351
