Title :
Low-temperature polycrystalline-silicon TFT on 7059 glass
Author :
Czubatyj, W. ; Beglau, D. ; Himmler, R. ; Wicker, G. ; Jablonski, D. ; Guha, S.
Author_Institution :
Energy Conversion Devices Inc., Troy, MI, USA
Abstract :
A polycrystalline-silicon (poly-Si) thin-film transistor (TFT) deposited at low temperature on Corning 7059 glass is reported. It has practical applications for low-cost thin-film display and imaging electronics manufacturing. All the process steps used to fabricate the poly-Si device take place at temperatures of 550 degrees C or less. The poly-Si films exhibit crystallite grain sizes on the order of 5000 AA, and the fabricated devices show field-effect mobilities of 10-20 cm/sup 2//V-s and threshold voltages around zero. A plasma process to form the source and drain contacts has also been developed.<>
Keywords :
carrier mobility; elemental semiconductors; flat panel displays; grain size; semiconductor technology; silicon; thin film transistors; 550 degC; Corning 7059 glass; Si; TFT; crystallite grain sizes; drain contacts; field-effect mobilities; imaging electronics; low temperature process; plasma process; polysilicon; source contacts; thin-film display; thin-film transistor; threshold voltages; Crystallization; Displays; Glass; Grain size; Manufacturing; Plasma devices; Plasma sources; Plasma temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
