Improvement of GaAs MESFET performance using surface p-layer doping (SPD) technique

Author

Chen, Chung-Hsu ; Skogen, John

Author_Institution

Honeywell Inc., Bloomington, MN, USA

Volume

10

Issue

8

fYear

1989

Firstpage

352

Lastpage

354

Abstract

The development of a surface p-layer doping (SPD) technique to improve GaAs MESFET performance is presented. Very shallow p-type doping into the gate-drain and gate-source regions is used to improve the output conductance of the device. It is found that the threshold voltage is independent of the SPD dose. The transconductance degrades significantly as the p doping (Be, 10 keV) increases above 3*10/sup 12//cm/sup 2/. However, the output conductance and subthreshold current are improved with higher SPD dose. The gate-source reverse breakdown voltage is improved by about 90%, and the parasitic resistance increases by about 30% with an SPD of 5*10/sup 12//cm/sup 2/.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor doping; 10 keV; GaAs; GaAs:Be; MESFET performance; gate-drain region; gate-source regions; gate-source reverse breakdown voltage; output conductance; parasitic resistance; shallow p-type doping; subthreshold current; surface p-layer doping; threshold voltage; transconductance; Degradation; Doping; FETs; Gallium arsenide; Low-frequency noise; MESFETs; Subthreshold current; Surface resistance; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31754

Filename

31754