• DocumentCode
    1166314
  • Title

    Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 \\mu m

  • Author

    Geerlings, E. ; Rattunde, M. ; Schmitz, J. ; Kaufel, G. ; Zappe, H. ; Wagner, J.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
  • Volume
    18
  • Issue
    18
  • fYear
    2006
  • Firstpage
    1913
  • Lastpage
    1915
  • Abstract
    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum
  • Keywords
    gallium compounds; laser beams; laser cavity resonators; laser tuning; semiconductor lasers; 2.23 to 2.39 mum; 9 to 16.5 mW; GaSb; GaSb-based external cavity diode laser; beam divergence; fiber couplers; laser tuning; quantum-well diode laser; Diode lasers; Gas lasers; Laser beams; Laser tuning; Optical coupling; Optical design; Optical fibers; Optical waveguides; Tunable circuits and devices; Waveguide lasers; External cavity; GaSb; fiber coupled; infrared diode laser; tuning range;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.881658
  • Filename
    1683845