DocumentCode :
1166391
Title :
Optically Modulated High-Sensitivity Heterostructure Varactor
Author :
Zhao, Xia ; Cola, Adriano ; Tersigni, Andrea ; Quaranta, Fabio ; Gallo, Eric ; Spanier, Jonathan E. ; Nabet, Bahram
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA
Volume :
27
Issue :
9
fYear :
2006
Firstpage :
710
Lastpage :
712
Abstract :
A novel optically modulated high-sensitivity heterostructure varactor, demonstrated as a strong candidate for high-order frequency-multiplier applications, is reported. The device is a delta modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts on the top. The capacitance-voltage (C-V) measurements show a C max/Cmin ratio up to 113 and an extremely high nonlinearity during the transition from high to low capacitance with sensitivity of up to 35. These results are one of the best obtained so far among similar structure devices. In addition, optoelectronic experimental results demonstrate that the slope of the C-V relationship can be modulated by the intensity of the incident optical power. A model describing the source of the reported C-V results is proposed along with the simulation results verifying the observed C-V behavior
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; frequency multipliers; gallium arsenide; metal-semiconductor-metal structures; two-dimensional hole gas; varactors; 2D-hole-gas; AlGaAs-GaAs; Schottky contacts; capacitance-voltage measurements; heterostructure-barrier-varactor; high-order frequency-multiplier; high-sensitivity heterostructure varactor; incident optical power; metal-semiconductor-metal; modulation-doped heterostructure; structure devices; Capacitance measurement; Capacitance-voltage characteristics; Epitaxial layers; Frequency; Gallium arsenide; Intensity modulation; Optical modulation; Optical sensors; Schottky barriers; Varactors; Frequency multiplier; heterostructure-barrier-varactor (HBV); metal–semiconductor–metal (MSM); optical modulation; two-dimensional-hole-gas (2-DHG);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.880637
Filename :
1683854
Link To Document :
بازگشت