Title :
The 1.6-kV AlGaN/GaN HFETs
Author :
Tipirneni, N. ; Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Simin, G. ; Khan, M.Asif
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC
Abstract :
The breakdown voltages in unpassivated nonfield-plated AlGaN/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGaN/GaN channel. After elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mum. The corresponding static ON-resistance was as low as 3.4 mOmegamiddotcm2. This translates to a power device figure-of-merit VBR 2/RON=7.5times108 V2middotOmega-1 cm-2, which, to date, is among the best reported values for an AlGaN/GaN HFET
Keywords :
III-V semiconductors; aluminium compounds; flashover; gallium compounds; power HEMT; sapphire; semiconductor device breakdown; wide band gap semiconductors; 1.6 kV; 20 micron; AlGaN-GaN channel; AlGaN-GaN-Al2O3; breakdown voltage; gate-drain spacing reaching; heterostructure field effect transistor; high-electron mobility transistor; high-voltage power device; nonfield-plated HFET; sapphire substrates; surface flashover; unpassivated HFET; Aluminum gallium nitride; Breakdown voltage; Contact resistance; Electric breakdown; Electron mobility; Flashover; Gallium nitride; HEMTs; MODFETs; Silicon carbide; AlGaN/GaN HFET; breakdown voltage; high-electron mobility transistor (HEMT); high-voltage power device; surface flashover;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.881084
