AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

Author

Higashiwaki, Masataka ; Mimura, Takashi ; Matsui, Toshiaki

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo

Volume

27

Issue

9

fYear

2006

Firstpage

719

Lastpage

721

Abstract

The authors fabricated SiN/AlN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) using SiN passivation by catalytic chemical vapor deposition (Cat-CVD). Cat-CVD SiN increased the electron density of AlN/GaN HFETs by compensating the surface depletion of the two-dimensional electron gas. The MIS-HFETs had a maximum drain current density of 0.95 A/mm and a peak extrinsic transconductance of 211 mS/mm. A current-gain cutoff frequency of 107 GHz and maximum oscillation frequency of 171 GHz were obtained for the 60- and 70-nm-gate devices, respectively

Keywords

III-V semiconductors; MIS devices; aluminium compounds; chemical vapour deposition; current density; gallium compounds; high electron mobility transistors; passivation; silicon compounds; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; 60 nm; 70 nm; Cat-CVD SiN; SiN-AlN-GaN; catalytic chemical vapor deposition; extrinsic transconductance; gate devices; insulated-gate HFET; metal-insulator-semiconductor heterostructure field-effect transistors; semiconductor passivation; surface depletion; Chemical vapor deposition; Cutoff frequency; Electrons; Gallium nitride; HEMTs; Insulation; MODFETs; Metal-insulator structures; Passivation; Silicon compounds; AlN; GaN; catalytic chemical vapor deposition (Cat-CVD); current-gain cutoff frequency; heterostructure field-effect transistor (HFET); maximum oscillation frequency; metal–insulator–semiconductor (MIS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.881087

Filename

1683857