Title :
Resistive Switching Mechanisms ofV-Doped

Memory Films
Author :
Lin, Chun-Chieh ; Tu, Bing-Chung ; Lin, Chao-Cheng ; Lin, Chen-Hsi ; Tseng, Tseung-Yuen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from Hto L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory
Keywords :
Poole-Frenkel effect; random-access storage; semiconductor doping; sputter etching; strontium compounds; vanadium; zirconium compounds; Frenkel-Poole emission; V:SrZrO3; conduction mechanism; high current state; low current state; nonvolatile memory; ohmic conduction; polarity direction; randomly trap electrons; resistive random access memory; resistive switching mechanisms; ruptured current paths; sputtered memory films; Chaos; Electrodes; Furnaces; Nonvolatile memory; Power semiconductor switches; Radio frequency; Random access memory; Semiconductor films; Stability; Voltage; Conduction mechanism; nonvolatile memory (NVM); resistive random access memory (RRAM); resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.880660