Title :
A new optical nanoinclusions detection method in transparent media
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The influence of nanoninclusions on realization precisions and sensitivities of a recently developed new approach in anisotropic (single-axis) crystals investigation is considered. It is proved in the work that one of the important experimental realization conditions of the developed approach is when ellipsometric reflection systems parameters are Ψ = π/4 H Δ = π/2. It is proposed to choose Si-SiO2 -type structures (silicon dioxide or silicon nitride film on silicon surface), which are isotropic and homogeneous, as a reflection system. It is shown that the precision and sensitivity of this approach considerably depends on the presence of nanoinclusions in the media under study.
Keywords :
anisotropic media; ellipsometry; inclusions; optical sensors; reflectivity; silicon; silicon compounds; Si-Si3N4; Si-SiO2; Si-silica-type structures; anisotropic crystals; ellipsometric reflection system parameters; optical nanoinclusion detection method; transparent media; Crystals; Ellipsometry; Indexes; Optical diffraction; Optical films; Reflection; Sensitivity; isotropic and anisotropic (single-axis) crystal; modified polarimetry; nanoninclusions; precision and sensitivity;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
DOI :
10.1109/APEIE.2014.7040729