DocumentCode
1166477
Title
Thin Film for High-Performance Metal–Insulator–Metal Capacitors
Author
Kim, Beom Jong ; Jeong, Young Hun ; Jang, Bo Yun ; Lim, Jong Bong ; Nahm, Sahn ; Sun, Ho-Jung ; Lee, Hwack Joo
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul
Volume
27
Issue
9
fYear
2006
Firstpage
740
Lastpage
742
Abstract
A high capacitance density of 4.84 fF/mum2 and a low leakage current density of 4.28 fA/pFmiddotV were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/mum2 and a low leakage current of 1.24 fA/pFmiddotV. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/degC at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/degC at 100 kHz
Keywords
MIM devices; barium compounds; current density; high-k dielectric thin films; leakage currents; samarium compounds; thin film capacitors; titanium compounds; 100 kHz; BaSm2Ti4O12; amorphous BST film; crystalline BST film; high-k dielectric thin film; high-performance metal-insulator-metal capacitors; leakage current density; temperature coefficient of capacitance; voltage coefficient of capacitance; Amorphous materials; Binary search trees; Capacitance; Capacitors; Crystallization; Dielectric thin films; Materials science and technology; Temperature; Transistors; Voltage; Capacitor; high-; metal–insulator–metal (MIM); temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.881085
Filename
1683864
Link To Document