• DocumentCode
    1166539
  • Title

    State filling in InAs quantum-dot laser structures

  • Author

    Osborne, Simon ; Blood, Peter ; Smowton, Peter ; Lutti, Julie ; Xin, Y.C. ; Stintz, A. ; Huffaker, D. ; Lester, Luke F.

  • Author_Institution
    Dept. of Phys. & Astron., Cardiff Univ., UK
  • Volume
    40
  • Issue
    12
  • fYear
    2004
  • Firstpage
    1639
  • Lastpage
    1645
  • Abstract
    We have measured the passive modal absorption, modal gain, and spontaneous emission spectra of a quantum-dot system where the inhomogeneous broadening is sufficiently small so that the ground- and excited-state transitions can be spectrally resolved. Absorption by ground- and excited-state transitions is in the ratio 1:1.88 which is close to the ratio of 2 expected for dots with similar dimensions in two directions. The absorption cross section per dot is measured to be 1.1 × 10-14 cm2. Optical gain from the ground-state saturates with current at a maximum value of one third of that predicted from the measured absorption if the system is fully inverted. The measured population inversion factor spectrum shows that the carrier distributions cannot be described only by a single global Fermi distribution and that the system is not in overall equilibrium. However, using parameters obtained by fitting the absorption spectrum, we find that for these particular samples the inversion factor spectrum can be described by a possible model where the ground- and excited-state occupancies are each described by a Fermi distribution but with different quasi-Fermi energy separations. We speculate that photon mediation within the homogeneous linewidth could be one possible process which establishes quasi-equilibrium within each of the ground- and excited-state inhomogeneous distributions.
  • Keywords
    III-V semiconductors; excited states; ground states; indium compounds; population inversion; quantum dot lasers; spectral line broadening; spontaneous emission; Fermi distribution; InAs quantum-dot laser structures; absorption cross section; absorption spectrum; carrier distributions; excited-state transitions; ground-state transitions; homogeneous linewidth; inhomogeneous broadening; inhomogeneous distributions; inversion factor spectrum; modal gain; optical gain; passive modal absorption; photon mediation; population inversion factor spectrum; quasiFermi energy separations; quasiequilibrium; single global Fermi distribution; spontaneous emission spectra; state filling; Absorption; Current measurement; Filling; Gain measurement; Laser excitation; Mediation; Optical saturation; Quantum dot lasers; Quantum dots; Spontaneous emission; 65; Laser diodes; optical gain; quantum dots;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2004.837331
  • Filename
    1359971