Title :
Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body
Author :
Lim, Y.F. ; Xiong, Y.Z. ; Singh, N. ; Yang, R. ; Jiang, Y. ; Chan, D.S.H. ; Loh, W.-Y. ; Bera, L.K. ; Lo, G.Q. ; Balasubramanian, N. ; Kwong, D.-L.
Author_Institution :
Inst. of Microelectron, Singapore
Abstract :
For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ~ 100 nm (fin height) and length of ~ 200 nm, the typical RTS capture/emission time constants were ~ 0.1-1 ms. Very large RTS amplitudes (DeltaId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (alpha~10-12-10-13 ) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation
Keywords :
1/f noise; MOSFET; flicker noise; semiconductor device noise; 1/f noise; MOSFET; flicker noise; gate-all-around Si-FinFET; interface quality; random telegraph signal noise; ultranarrow body; very large RTS amplitudes; 1f noise; Controllability; Electrostatics; FinFETs; Helium; MOSFETs; Scattering; Senior members; Silicon; Telegraphy; FinFET; flicker; gate-all-around (GAA); noise; random telegraph signals (RTS);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.880640
