Title :
RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices
Author :
Andrés, E. San ; Pantisano, L. ; Ramos, J. ; Severi, S. ; Trojman, L. ; De Gendt, S. ; Groeseneken, G.
Author_Institution :
Complutense Univ., Madrid
Abstract :
In this letter, the feasibility of split-capacitance-voltage (C-V) measurements in the RF range is demonstrated. These RF/split-C-V measurements show excellent agreement with the values obtained by the low-frequency conventional technique but without presenting any noticeable degradation due to gate leakage
Keywords :
MOSFET; capacitance measurement; dielectric thin films; voltage measurement; RF split capacitance-voltage measurements; RF split-C-V measurements; capacitance measurement; leaky MOSFET devices; low-frequency technique; short-channel devices; ultra-thin gate dielectric; Capacitance measurement; Degradation; Dielectric measurements; Frequency measurement; Gate leakage; Helium; MOSFET circuits; Microelectronics; Radio frequency; Voltage measurement; Capacitance measurement; MOSFET; RF; ultrathin gate dielectric;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.881089
