• DocumentCode
    1166585
  • Title

    Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs

  • Author

    Colinge, J.P. ; Xiong, Weize ; Cleavelin, C.R. ; Schulz, T. ; Schrüfer, K. ; Matthews, K. ; Patruno, P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
  • Volume
    27
  • Issue
    9
  • fYear
    2006
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the ID(VG) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model
  • Keywords
    MOSFET; oscillations; quantum wires; scattering; semiconductor device measurement; silicon-on-insulator; 1D semiconductor theory; 2D gas model; Pi-Gate MOSFET; intersubband scattering; oscillations; quantum wires; semiconductor device measurements; silicon fins; silicon-on-insulator; Electrons; Etching; Lithography; MOSFETs; Particle scattering; Semiconductor device measurement; Semiconductor device modeling; Silicon on insulator technology; Temperature; Wires; MOSFETs; quantum wires; semiconductor device measurements; silicon-on-insulator (SOI) technology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.881086
  • Filename
    1683875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1166585