Photonic Crystal Nanobeam Cavity With Stagger Holes for Ultrafast Directly Modulated Nano-Light-Emitting Diodes

Author

Yongzhuo Li ; Kaiyu Cui ; Xue Feng ; Yidong Huang ; Da Wang ; Zhilei Huang ; Wei Zhang

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

Volume

5

Issue

1

fYear

2013

fDate

Feb. 2013

Firstpage

4700306

Lastpage

4700306

Abstract

A photonic crystal nanobeam cavity with stagger holes in InP/InGaAsP/InP heterostructure is proposed for ultrafast directly modulated nano-light-emitting diodes (nanoLEDs). With stagger holes, the quality factor Q can be engineered in the range of 10² ~ 10⁴ while keeping a small mode volume (V_eff). As a result, the modulation speed of nanoLEDs can be dramatically improved by a small V_eff to enhanced spontaneous emission (SpE) rate and a moderate Q to counterbalance SpE lifetime and photon lifetime of the cavity. In our simulation, the direct modulation bandwidth could be higher than 60 GHz with optimal Q value of 2150 and V_eff of 2.3( λ₀/2n)³.

Keywords

III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; light emitting diodes; microcavities; nanophotonics; optical modulation; photonic crystals; spontaneous emission; InP-InGaAsP-InP; SpE lifetime; direct modulation bandwidth; nanoLED; photon lifetime; photonic crystal nanobeam cavity; quality factor; small mode volume; spontaneous emission; stagger holes; ultrafast directly modulated nanolight-emitting diodes; Bandwidth; Cavity resonators; Indium phosphide; Modulation; Optimized production technology; Photonic crystals; Photonics; Photonic crystals; light-emitting diodes (LEDs); nanocavities;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2240289

Filename

6412698