Title :
Poly-gate sidewall oxidation induced submicrometer MOSFET degradation
Author :
Pfiester, James R. ; Parrillo, L.C. ; Hayden, James D. ; See, Yee-Chaung ; Fejes, Peter
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
The effect of poly-gate sidewall oxidation on short-channel MOSFET behavior is examined. The gain, threshold voltage, and apparent electrical channel length are shown to be very sensitive to the location of the n/sup -/ junction edge with respect to the poly-gate edge for a lightly-doped-drain NMOS transistor. New guidelines for the design of submicrometer MOSFETs based on an analysis of the sidewall oxidation of the polysilicon after gate definition are proposed.<>
Keywords :
insulated gate field effect transistors; oxidation; semiconductor device testing; PMOS transistors; electrical channel length; gain; lightly-doped-drain NMOS transistor; n/sup -/ junction edge; poly-gate sidewall oxidation; short-channel MOSFET; submicrometer MOSFET degradation; threshold voltage; Degradation; Doping profiles; Etching; Guidelines; MOS devices; MOSFET circuits; Oxidation; Silicon; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
