Title :
120 W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted on diamond heatsink
Author :
Sakamoto, Makoto ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
Abstract :
Continuous-wave output power levels of 120 W at 2 degrees C and 100 W at room temperature are reported from 1 cm wide monolithic AlGaAs (800 nm) laser diode arrays with a 7200 mu m total aperture width by using diamond heatsinks. Additionally, 25 W CW operation up to 90 degrees C has been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor laser arrays; 100 W; 120 W; 2 degC; 25 W; 7200 micron; 800 nm; 90 degC; AlGaAs; C; CW output power; III-V semiconductors; laser diode array; total aperture width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920123
