Title :
Microwave noise performance of InP/InGaAs heterostructure bipolar transistors
Author :
Chen, Young-Kai ; Nottenburg, Richard N. ; Panish, Morton B. ; Hamm, R.A. ; Humphrey, D.A.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The authors report the first low-noise InP/InGaAs heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46, 2.0, and 3.33 dB were measured at 2, 10, and 18 GHz, respectively. The noise performance of this InP/InGaAs HBT with an emitter size of 3.5*3.5 mu m/sup 2/ is compared to that for FETs having a 1- mu m gate length. The measured minimum noise figures agree well with calculated data using a modified Hawkins model. Broadband low-noise operation is observed because of the short transit time for injected nonequilibrium electrons to transverse the base and collector depletion region.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.46 dB; 10 GHz; 18 GHz; 2 GHz; 2.0 dB; 3.33 dB; InP-InGaAs; depletion region; emitter size; heterostructure bipolar transistor; injected nonequilibrium electrons; microwave noise; modified Hawkins model; noise figures; noise performance; transit time; Bipolar transistors; Electrons; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise figure; Noise measurement;
Journal_Title :
Electron Device Letters, IEEE
