Title :
Numerical simulation of the vertical complementary NPN bipolar transistor
Author :
Kalinin, S.V. ; Hrapov, M.O.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN transistor fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value collector-emitter breakdown. Comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical.
Keywords :
bipolar transistors; semiconductor device breakdown; semiconductor epitaxial layers; technology CAD (electronics); P-epitaxial layer; TCAD Sentaurus; buried layers; numerical simulation; transistor output characteristics; vertical complementary NPN bipolar transistor; voltage value collector-emitter breakdown; Doping profiles; Epitaxial layers; Numerical models; Numerical simulation; Semiconductor device modeling; Semiconductor process modeling; Transistors; P-epitaxy; TCAD Sentaurus; breakdown voltage of the collector-emitter; complementary NPN transistor; simulation;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
DOI :
10.1109/APEIE.2014.7040739
