Numerical simulation of the vertical complementary NPN bipolar transistor

Author

Kalinin, S.V. ; Hrapov, M.O.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

2-4 Oct. 2014

Firstpage

68

Lastpage

70

Abstract

In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN transistor fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value collector-emitter breakdown. Comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical.

Keywords

bipolar transistors; semiconductor device breakdown; semiconductor epitaxial layers; technology CAD (electronics); P-epitaxial layer; TCAD Sentaurus; buried layers; numerical simulation; transistor output characteristics; vertical complementary NPN bipolar transistor; voltage value collector-emitter breakdown; Doping profiles; Epitaxial layers; Numerical models; Numerical simulation; Semiconductor device modeling; Semiconductor process modeling; Transistors; P-epitaxy; TCAD Sentaurus; breakdown voltage of the collector-emitter; complementary NPN transistor; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4799-6019-4

Type

conf

DOI

10.1109/APEIE.2014.7040739

Filename

7040739