DocumentCode
1166847
Title
43 Gbit/s automatic gain control amplifier based on InP SHBT technology
Author
Ho, Min-Chung ; Guinn, K. ; Lao, Zhihao ; Lee, Shing ; Yu, M. ; Xu, Mu-Lang ; Radisic, V. ; Wang, K.C.
Author_Institution
Adv. Product Dev. Center (APC), OpNext Inc., Thousand Oaks, CA, USA
Volume
39
Issue
5
fYear
2003
fDate
3/6/2003 12:00:00 AM
Firstpage
415
Lastpage
416
Abstract
A high bandwidth automatic-gain-control (AGC) amplifier has been designed and characterised. Fabricated in InP single-heterojunction-bipolar transistor (SHBT) technology, the measured bandwidth of the amplifier is 36 GHz with maximum small signal gain 22 dB. Capable of operating at 43 Gbit/s, this is believed to be the fastest AGC amplifier reported to date.
Keywords
III-V semiconductors; automatic gain control; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 22 dB; 36 GHz; 43 Gbit/s; InP; InP single heterojunction bipolar transistor; bandwidth; high-speed automatic gain control amplifier; small-signal gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030293
Filename
1189984
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