Adaptive Algorithm Using Hot-Electron Injection for Programming Analog Computational Memory Elements Within 0.2% of Accuracy Over 3.5 Decades

Author

Bandyopadhyay, Abhishek ; Serrano, Guillermo J. ; Hasler, Paul

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

41

Issue

9

fYear

2006

Firstpage

2107

Lastpage

2114

Abstract

This paper describes a new predictive algorithm that can be used for programming large arrays of analog computational memory elements within 0.2% of accuracy for 3.5 decades of currents. The average number of pulses required are 7-8 (20 mus each). This algorithm uses hot-electron injection for accurate programming and Fowler-Nordheim tunneling for global erase. This algorithm has been tested for programming 1024times16 and 96times16 floating-gate arrays in 0.25 mum and 0.5 mum n-well CMOS processes, respectively

Keywords

CMOS memory circuits; analogue storage; hot carriers; tunnelling; 0.25 micron; 0.5 micron; 20 mus; CMOS process; Fowler-Nordheim tunneling; adaptive algorithm; analog computational memory elements; floating-gate array programming; hot-electron injection; predictive algorithm; Adaptive algorithm; Analog computers; CMOS process; Circuits; EPROM; Image storage; Nonvolatile memory; Secondary generated hot electron injection; Space vector pulse width modulation; Tunneling; Adaptive programming; Fowler–Nordheim tunnelling; floating gate; hot–electron injection;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.880621

Filename

1683902