• DocumentCode
    1166894
  • Title

    Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

  • Author

    Chih-Wei Yang ; Shih-Fang Chen ; Chun-Yu Lin ; Ming-Fang Wang ; Tuo-Hung Hou ; Liang-Gi Yao ; Shih-Chang Chen ; Mong-Song Liang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • fDate
    3/6/2003 12:00:00 AM
  • Firstpage
    421
  • Lastpage
    422
  • Abstract
    The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.
  • Keywords
    MOS capacitors; electric breakdown; hafnium compounds; leakage currents; nitridation; semiconductor-insulator boundaries; HfSiO-Si; NH3; NH3 nitridation; electrical properties; flatband voltage; hafnium silicate dielectric; high-k dielectric/silicon interface; leakage current; polysilicon gate MOS capacitor; soft breakdown; thermal nitridation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030278
  • Filename
    1189988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1166894