Title :
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
Author :
Chih-Wei Yang ; Shih-Fang Chen ; Chun-Yu Lin ; Ming-Fang Wang ; Tuo-Hung Hou ; Liang-Gi Yao ; Shih-Chang Chen ; Mong-Song Liang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/6/2003 12:00:00 AM
Abstract :
The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.
Keywords :
MOS capacitors; electric breakdown; hafnium compounds; leakage currents; nitridation; semiconductor-insulator boundaries; HfSiO-Si; NH3; NH3 nitridation; electrical properties; flatband voltage; hafnium silicate dielectric; high-k dielectric/silicon interface; leakage current; polysilicon gate MOS capacitor; soft breakdown; thermal nitridation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030278
