Title :
Bipolar Microwave RMS Power Detectors
Author :
Zhang, Tao ; Eisenstadt, William R. ; Fox, Robert M. ; Yin, Qizhang
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
Abstract :
A peak/RMS power detector with ges40 dB dynamic range is presented. The simulated frequency response is flat to 60GHz and the measured response is flat to 20 GHz. Analysis shows that the Meyer detector, originally developed as a peak detector, can be used for RMS detection with an error less than 0.5dB over an approximately 20 dB range, comparable to the popular RF/microwave diode detector. The range for RMS detection is extended by cascading several stages of attenuators and detectors, leading to a circuit suitable for applications such as embedded RFIC test. The power detector is only 700times550 mum2 including all AC and DC bond pads
Keywords :
bipolar integrated circuits; built-in self test; detector circuits; frequency response; microwave integrated circuits; 20 GHz; 60 GHz; RF diode detector; bipolar RMS power detectors; bipolar transistors; built-in-self test; frequency response; microwave RMS power detectors; microwave diode detector; peak detector; radiofrequency integrated circuits; Bandwidth; Bipolar transistors; Circuit testing; Dynamic range; Electromagnetic measurements; Envelope detectors; Power measurement; Schottky diodes; Semiconductor diodes; Thermal resistance; Bipolar; RMS; RMS power detector; bipolar transistor; built-in-self test; detector; embedded test; peak; peak detector; power;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.880592
