A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT´s

Author

Farley, C.W. ; Wang, K.C. ; Chang, M.F. ; Asbeck, Peter M. ; Nubling, R.B. ; Sheng, N.H. ; Pierson, R. ; Sullivan, G.J.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

10

Issue

8

fYear

1989

Firstpage

377

Lastpage

379

Abstract

The authors describe the first frequency divider demonstrated using AlInAs/GaInAs heterojunction bipolar transistors (HBTs). The divider (a static 1/4 divider circuit) operates up to a maximum frequency of 17.1 GHz, corresponding to a gate delay of 29 ps for a bilevel current-mode logic (CML) gate with a fan-out of 2, and a total power consumption of 67 mW (about 4.5 mW per equivalent NOR gate). These results demonstrate the potential of AlInAs/GaInAs HBTs for implementing low-power, high-speed integrated circuits.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; 17.1 GHz; 29 ps; 67 mW; AlInAs-GaInAs; bilevel current-mode logic; divide-by-4 frequency divider; gate delay; heterojunction bipolar transistors; high-speed integrated circuits; maximum frequency; power consumption; static 1/4 divider circuit; Cutoff frequency; Doping; Energy consumption; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Power dissipation; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31762

Filename

31762