DocumentCode
1167000
Title
High efficiency long wavelength VCSEL on InP grown by MOCVD
Author
Nishiyama, N. ; Caneau, C. ; Guryanov, G. ; Liu, X.S. ; Hu, M. ; Zah, C.E.
Author_Institution
Corning Inc., NY, USA
Volume
39
Issue
5
fYear
2003
fDate
3/6/2003 12:00:00 AM
Firstpage
437
Lastpage
439
Abstract
High efficiency continuous-wave operation of 1.53 μm vertical cavity surface emitting lasers (VCSELs) with buried tunnel junction grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 μm diameter.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 0.45 mA; 1 mW; 1.3 V; 1.53 micron; 46 percent; 5 micron; AlGaInAs quantum wells; AlGaInAs-InP; CW operation; InP; InP substrate; MOCVD; buried tunnel junction; continuous-wave operation; high differential quantum efficiency; high efficiency VCSEL; long wavelength VCSEL; metal organic chemical vapour deposition; room temperature operation; singlemode power; vertical cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030288
Filename
1189999
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