DocumentCode :
1167012
Title :
A fast diffusion-driven photodetector: theory and experiment
Author :
Kostenbauder, Adnah ; Yoo, S.J.B. ; Siegman, A.E.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Volume :
24
Issue :
2
fYear :
1988
Firstpage :
240
Lastpage :
244
Abstract :
A high-speed photodetector has been demonstrated. Prototype silicon devices have detection bandwidths of 5 GHz and are limited by neither the saturation-velocity transit time nor the carrier lifetime. These detectors use a combination of the Dember effect and the east of generating fine photocarrier gratings, and scale to bandwidths of several hundred gigahertz.<>
Keywords :
Dember effect; elemental semiconductors; photodetectors; silicon; 5 GHz; Dember effect; Si devices; detection bandwidths; fast diffusion-driven photodetector; fine photocarrier gratings; high-speed photodetector; semiconductor; Bandwidth; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Detectors; Gratings; Optical waveguides; Photodetectors; Slabs; Waveguide junctions;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.119
Filename :
119
Link To Document :
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