Characteristics of trench j-MOS power transistors

Author

MacIver, Bernard A. ; Valeri, Stephen J. ; Jain, Kailash C. ; Erskine, James C. ; Rossen, Rebecca

Author_Institution

Gen. Motors Res. Lab., Warren, MI, USA

Volume

10

Issue

8

fYear

1989

Firstpage

380

Lastpage

382

Abstract

The fabrication of trench j-MOS transistors in bulk silicon, so that they can be operated in either a three-terminal or a four-terminal mode, is presented. When the transistors are operated in accumulation mode, the specific on-resistance is 0.8 m Omega -cm/sup 2/. In the four-terminal mode a high transconductance, 290 S/cm/sup 2/, is achieved by manipulating the inversion layer charge. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. These properties make the trench j-MOS transistor attractive for power switching.<>

Keywords

insulated gate field effect transistors; power transistors; semiconductor device testing; accumulation mode; bulk Si; four-terminal mode; inversion layer charge; mixed pentode-triode drain characteristics; power switching; response times; specific on-resistance; three-terminal mode; transconductance; trench j-MOS power transistors; Delay; Diodes; Etching; FETs; Fabrication; P-n junctions; Power transistors; Silicon on insulator technology; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31763

Filename

31763